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HUF75345S3ST - onsemi

Description: Peak Current vs Pulse Width Curve; 75A, 55V; Thermal Impedance SPICE and SABER Models; UIS Rating Curve; Temperature Compensated PSPICE® and SABER™ Models; Related Literature  - TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”

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HUF75345S3ST - onsemi PCB footprint - Other - Other - HUF75345S3ST-1
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HUF75345S3ST Details

  • Manufacturer Part Number:

    HUF75345S3ST

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    325 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUF75345S3ST Frequently Asked Questions (FAQs)

  • The maximum SOA for the HUF75345S3ST is not explicitly stated in the datasheet. However, it's recommended to follow the guidelines provided in the onsemi application note AND8033/D, which provides SOA curves for similar devices.
  • To ensure proper thermal management, follow the thermal design guidelines in the datasheet, and consider using a heat sink with a thermal interface material (TIM) to reduce thermal resistance. Additionally, ensure good airflow around the device and avoid overheating.
  • The recommended gate drive voltage is typically between 10V to 15V, and the current depends on the specific application. A good starting point is to use a gate drive current of around 1A to 2A. However, consult the datasheet and application notes for more specific guidance.
  • To protect the HUF75345S3ST from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. Also, ensure that the device is properly grounded during assembly and testing.
  • Follow the PCB layout and routing guidelines provided in the datasheet and application notes. Key considerations include minimizing trace inductance, using a solid ground plane, and keeping high-current paths short and wide.

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HUF75345S3ST Overview

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Part Image HUF75345S3ST_NL Rochester Electronics LLC

75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN

Part Image HUF75345S3ST Rochester Electronics LLC

75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN

Part Image HUF75345S3S Intersil Corporation

Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image HUFA75345S3ST Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image HUF75345S3S Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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