Part Image

HUFA76645S3ST_F085 - onsemi

Description: N-channel MOSFET Transistor, 75 A, 100 V, 0.015ohm 3-Pin TO-263AB

Download HUFA76645S3ST_F085 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
HUFA76645S3ST_F085 - onsemi PCB footprint - Other - Other - HUFA76645S3ST_F085-2
click to zoom

HUFA76645S3ST_F085 Details

  • Manufacturer Part Number:

    HUFA76645S3ST_F085

  • Brand Name:

    ON Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Manufacturer Package Code:

    TO263A02

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    310 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

HUFA76645S3ST_F085 Frequently Asked Questions (FAQs)

  • A good PCB layout should ensure minimal thermal resistance, use thermal vias, and keep the device away from heat sources. A heat sink or thermal pad can be used to improve heat dissipation. Consult onsemi's application notes and thermal management guidelines for more information.
  • Follow onsemi's EMC and EMI guidelines, use proper shielding, and ensure the device is placed in a Faraday cage or shielded enclosure. Implement filtering and decoupling capacitors to reduce noise and radiation. Consult onsemi's application notes and EMC/EMI compliance documents for more information.
  • onsemi provides reliability data and failure rate estimates in their quality and reliability reports. The HUFA76645S3ST-F085 has a high reliability rating, with a FIT (Failure In Time) rate of < 10 FIT/MHr. Consult onsemi's quality and reliability reports for more information.
  • The HUFA76645S3ST-F085 is rated for operation up to 150°C (TJ). However, the device's performance and reliability may degrade at higher temperatures. Consult onsemi's application notes and thermal management guidelines for more information on high-temperature operation.
  • Follow onsemi's recommended soldering and assembly guidelines, which include using a soldering iron with a temperature range of 250°C to 260°C, and ensuring the device is handled and stored in a static-safe environment. Consult onsemi's application notes and assembly guidelines for more information.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

HUFA76645S3ST_F085 Overview

Use the download button to access the HUFA76645S3ST_F085 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like HUFA7, or try a keyword search, such as Power Field-Effect Transistors

Parts related to HUFA76645S3ST_F085

Showing 0 results

HUFA76645S3ST_F085 Alternates

Showing results

Image Part Number Model
Part Image HUFA76645S3ST_F085 Rochester Electronics LLC

75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT PACKAGE-3

Part Image HUFA76645S3ST_F085 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image HUFA76645S3ST-F085 onsemi

N-Channel Logic Level UltraFET® 100V, 75A, 15mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified