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IAUC100N08S5N043ATMA1 - Infineon

Description: N-Channel 80 V 100A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-34

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IAUC100N08S5N043ATMA1 Details

  • Manufacturer Part Number:

    IAUC100N08S5N043ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    35 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Reference Standard:

    AEC-Q101; IEC-68-1

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IAUC100N08S5N043ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IAUC100N08S5N043ATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value for IAUC100N08S5N043ATMA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, IAUC100N08S5N043ATMA1 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are synchronized and the thermal management is adequate.
  • The maximum allowable voltage transient for IAUC100N08S5N043ATMA1 is ±10% of the maximum rated voltage (800V).

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IAUC100N08S5N043ATMA1 Overview

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Part Image IAUC100N08S5N043 Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 80V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET