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IAUC100N10S5L040ATMA1 - Infineon

Description: MOSFET MOSFET_(75V 120V(/002

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IAUC100N10S5L040ATMA1 Details

  • Manufacturer Part Number:

    IAUC100N10S5L040ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0057 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    42 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IAUC100N10S5L040ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IAUC100N10S5L040ATMA1 is -40°C to 150°C.
  • Proper thermal management can be achieved by ensuring good heat sink contact, using thermal interface materials, and maintaining a low thermal resistance between the IGBT and heat sink.
  • The recommended gate resistor value for IAUC100N10S5L040ATMA1 is typically in the range of 10 ohms to 20 ohms, depending on the specific application and switching frequency.
  • Yes, IAUC100N10S5L040ATMA1 can be used in a parallel configuration, but it's essential to ensure that the IGBTs are properly matched, and the gate drive and thermal management are designed to handle the increased current and heat generation.
  • The maximum allowable voltage transient for IAUC100N10S5L040ATMA1 is typically 1.5 times the maximum rated voltage, but it's recommended to consult the datasheet and application notes for specific guidance.

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IAUC100N10S5L040ATMA1 Overview

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