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IAUC120N06S5L032ATMA1 - Infineon

Description: MOSFET N-CH 60V 120A TDSON-8-34

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IAUC120N06S5L032ATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8-34
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IAUC120N06S5L032ATMA1 - Infineon  - 3D model - Other - PG-TDSON-8-34
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IAUC120N06S5L032ATMA1 Details

  • Manufacturer Part Number:

    IAUC120N06S5L032ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    92 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    36 pF

  • JESD-30 Code:

    R-PDSO-F8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    94 W

  • Pulsed Drain Current-Max (IDM):

    364 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IAUC120N06S5L032ATMA1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IAUC120N06S5L032ATMA1 is a TO-220 Full Pack 3-lead package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 4.5mm x 4.5mm.
  • To ensure reliability in high-temperature applications, it is recommended to follow the thermal design guidelines provided in the datasheet, including proper heat sinking, thermal interface material selection, and derating the device's power rating according to the ambient temperature.
  • Yes, IAUC120N06S5L032ATMA1 can be used in parallel to increase current handling capability, but it is essential to ensure that the devices are properly matched, and the gate drive and layout are designed to minimize current imbalance and oscillations.
  • The recommended gate drive voltage for IAUC120N06S5L032ATMA1 is between 10V and 15V, with a maximum gate-source voltage of 20V. A higher gate drive voltage can improve switching performance, but it also increases the risk of gate oxide damage.
  • To protect IAUC120N06S5L032ATMA1 from ESD, it is recommended to follow proper handling and storage procedures, use ESD-protective packaging and materials, and implement ESD protection circuits in the application, such as TVS diodes or ESD protection arrays.

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IAUC120N06S5L032ATMA1 Overview

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