IAUMN08S5N013G - Infineon

IAUMN08S5N013G Details

• Manufacturer Part Number:

  IAUMN08S5N013G

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Country Of Origin:

  Germany, Malaysia

• ECCN Code:

  EAR99

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  13

• Avalanche Energy Rating (Eas):

  535 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  80 V

• Drain Current-Max (ID):

  250 A

• Drain-source On Resistance-Max:

  0.0013 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  130 pF

• JESD-30 Code:

  R-PSSO-G4

• Moisture Sensitivity Level:

  2

• Number of Elements:

  1

• Number of Terminals:

  4

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  307 W

• Pulsed Drain Current-Max (IDM):

  1400 A

• Reference Standard:

  AEC-Q101

• Surface Mount:

  YES

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Transistor Element Material:

  SILICON