IAUMN Model Download Search Results
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IAUMN08S5N013G
Infineon
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1 | Automotive MOSFET OptiMOS™ 5 Power-Transistor, AEC-Q101, MSL2 up to 260°C, 175°C, PG-HSOG-4-1, RoHS | Other | IAUMN08S5N013G |
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IAUMN04S7N011G
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 150A I(D), 40V, 0.00114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IAUMN04S7N011G |
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IAUMN08S5N012G
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 300A I(D), 80V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IAUMN08S5N012G |
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IAUMN10S5N016G
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 220A I(D), 100V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IAUMN10S5N016G |
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IAUMN04S7N005G
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 250A I(D), 40V, 0.0005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IAUMN04S7N005G |
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IAUMN04S7N009G
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 200A I(D), 40V, 0.00086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IAUMN04S7N009G |
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IAUMN04S7N006G
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 200A I(D), 40V, 0.0006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IAUMN04S7N006G |
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IAUMN10S5N017G
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 200A I(D), 100V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IAUMN10S5N017G |
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