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IAUT150N10S5N035 - Infineon

Description: N-CH 100V 150A 3,5mOhm HSOF-8

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IAUT150N10S5N035 - Infineon PCB footprint - Other - Other - PG-HSOF-8-1
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IAUT150N10S5N035 - Infineon  - 3D model - Other - PG-HSOF-8-1
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IAUT150N10S5N035 Details

  • Manufacturer Part Number:

    IAUT150N10S5N035

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-10-02

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    13

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    150 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    600 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IAUT150N10S5N035 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IAUT150N10S5N035 is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the maximum junction temperature (Tj) should not exceed 150°C to ensure reliable operation and prevent damage.
  • Proper thermal management is crucial for the IAUT150N10S5N035. Ensure good heat dissipation by using a suitable heat sink, applying a thermal interface material (TIM), and maintaining a low thermal resistance between the module and heat sink. Additionally, consider the airflow, ambient temperature, and power cycling to prevent overheating.
  • The recommended gate resistance (Rg) for the IAUT150N10S5N035 is typically in the range of 10 Ω to 20 Ω. However, the optimal value may vary depending on the specific application, switching frequency, and gate driver characteristics. Consult the datasheet and application notes for more information.
  • Yes, the IAUT150N10S5N035 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drivers are synchronized to prevent uneven current sharing and oscillations.
  • When designing a PCB for the IAUT150N10S5N035, consider the following: keep the gate and emitter tracks short and wide, use a solid ground plane, and ensure good decoupling and filtering. Additionally, follow the recommended layout guidelines in the datasheet and application notes to minimize electromagnetic interference (EMI) and ensure reliable operation.

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