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IAUT240N08S5N019ATMA1 - Infineon

Description: 80V, N-Ch, 1.9 mΩ max, Automotive MOSFET, TOLL, OptiMOS™-5

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IAUT240N08S5N019ATMA1 Details

  • Manufacturer Part Number:

    IAUT240N08S5N019ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    400 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    240 A

  • Drain-source On Resistance-Max:

    0.0019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    76 pF

  • JESD-30 Code:

    R-PSSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    230 W

  • Pulsed Drain Current-Max (IDM):

    960 A

  • Reference Standard:

    AEC-Q101; IEC-68-1

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IAUT240N08S5N019ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IAUT240N08S5N019ATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value for IAUT240N08S5N019ATMA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, IAUT240N08S5N019ATMA1 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are properly synchronized and the thermal management is adequate.
  • The maximum allowable voltage transient for IAUT240N08S5N019ATMA1 is 1200 V, but it's recommended to limit the voltage transient to 900 V to ensure reliable operation.

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IAUT240N08S5N019ATMA1 Overview

Use the download button to access the IAUT240N08S5N019ATMA1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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