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IAUT300N10S5N015ATMA1 - Infineon

Description: MOSFET MOSFET_(75V,120V(

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IAUT300N10S5N015ATMA1 - Infineon PCB footprint - Other - Other - IAUT300N10S5N015ATMA1
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IAUT300N10S5N015ATMA1 - Infineon  - 3D model - Other - IAUT300N10S5N015ATMA1
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IAUT300N10S5N015ATMA1 Details

  • Manufacturer Part Number:

    IAUT300N10S5N015ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    652 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    300 A

  • Drain-source On Resistance-Max:

    0.0015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    126 pF

  • JESD-30 Code:

    R-PSSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Pulsed Drain Current-Max (IDM):

    1200 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    118 ns

  • Turn-on Time-Max (ton):

    44 ns

IAUT300N10S5N015ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IAUT300N10S5N015ATMA1 is -40°C to 150°C.
  • Proper thermal management can be achieved by using a heat sink with a thermal resistance of less than 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value for IAUT300N10S5N015ATMA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, IAUT300N10S5N015ATMA1 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are properly synchronized and that the thermal management is adequate for the increased power dissipation.
  • The maximum allowable voltage transient for IAUT300N10S5N015ATMA1 is 1200 V, but it's recommended to limit the voltage transient to 1000 V to ensure reliable operation.

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IAUT300N10S5N015ATMA1 Overview

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