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IDH10G120C5XKSA1 - Infineon

Description: Schottky Diodes & Rectifiers SIC CHIP/DISCRETE

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PCB Footprints
IDH10G120C5XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-2
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3D Models
IDH10G120C5XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-2
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IDH10G120C5XKSA1 Details

  • Manufacturer Part Number:

    IDH10G120C5XKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 2 PIN

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    53 Weeks, 1 Day

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    1200 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.8 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    84 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    31.9 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    165 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    62 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDH10G120C5XKSA1 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to ensure efficient heat dissipation.
  • Ensure proper thermal design, use a heat sink or thermal pad, and follow the recommended PCB layout. Also, consider derating the device's power dissipation at high temperatures.
  • The critical timing parameters include the input signal rise and fall times, output signal propagation delay, and clock-to-output delay. These parameters can be found in the device's datasheet or application notes.
  • Use proper PCB layout techniques, such as separating analog and digital circuits, using shielding, and implementing EMI filters. Also, ensure that the device is properly decoupled and bypassed.
  • Use a combination of ceramic and electrolytic capacitors for decoupling, and place them close to the device's power pins. Also, use a low-ESR capacitor for bypassing the power supply.

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IDH10G120C5XKSA1 Overview

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Part Image IDH10G120C5 Infineon Technologies AG

Rectifier Diode, Schottky, 1 Phase, 1 Element, 31.9A, 1200V V(RRM), Silicon Carbide, TO-220AC