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IDH10G65C5 - Infineon

Description: Silicon Carbide Diode

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Symbol
IDH10G65C5 - Infineon - PCB symbol
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PCB Footprints
IDH10G65C5 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-2
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3D Models
IDH10G65C5 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO220-2
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IDH10G65C5 Details

  • Manufacturer Part Number:

    IDH10G65C5

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AC

  • Package Description:

    TO-220, 2 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    431 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    89 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    180 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDH10G65C5 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to ensure efficient heat dissipation.
  • Ensure that the device is operated within the recommended voltage and current limits, and that the PCB is designed to minimize thermal gradients. Additionally, consider using thermal simulation tools to optimize the design.
  • Critical timing parameters include the input rise and fall times, clock-to-output delay, and output hold time. Ensure that these parameters are met by using a clock signal with a stable frequency and amplitude, and by using a PCB layout that minimizes signal reflections and crosstalk.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to protect against electrostatic discharge. Ensure that the ESD protection devices are rated for the maximum voltage and current of the device.
  • Use a combination of ceramic and electrolytic capacitors with values ranging from 10nF to 10uF, placed as close as possible to the device's power pins. Ensure that the capacitors are rated for the maximum voltage and current of the device.

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IDH10G65C5 Overview

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IDH10G65C5 Alternates

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Part Image IDH10G65C5XKSA1 Infineon Technologies AG

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 650V V(RRM), Silicon Carbide, TO-220AC