Part Image

IDH10G65C6XKSA1 - Infineon

Description: INFINEON - IDH10G65C6XKSA1 - SIC SCHOTTKY DIODE, 650V, 24A, TO-220

Download IDH10G65C6XKSA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IDH10G65C6XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IDH10G65C6XKSA1
click to zoom
3D Models
IDH10G65C6XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - IDH10G65C6XKSA1
click to zoom

IDH10G65C6XKSA1 Details

  • Manufacturer Part Number:

    IDH10G65C6XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220, 2 PIN

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.35 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    44 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    24 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    72 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    33 µA

  • Reverse Test Voltage:

    420 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDH10G65C6XKSA1 Frequently Asked Questions (FAQs)

  • Infineon recommends a 2-layer or 4-layer PCB with a thermal via array under the device to ensure good heat dissipation. A minimum of 10 thermal vias with a diameter of 0.3 mm is recommended.
  • To ensure reliable operation at high temperatures, it is essential to follow the recommended thermal design and layout guidelines. Additionally, the device should be operated within the specified junction temperature range (TJ) of -40°C to 150°C.
  • When designing EMI filters for the IDH10G65C6XKSA1, critical parameters to consider include the filter's cutoff frequency, insertion loss, and impedance. A common-mode choke and X-capacitors are recommended for effective EMI filtering.
  • When selecting a gate driver for the IDH10G65C6XKSA1, consider the driver's output current capability, rise and fall times, and voltage rating. The gate driver should be able to provide a peak current of at least 2 A and have a voltage rating of 15 V or higher.
  • When paralleling multiple IDH10G65C6XKSA1 devices, key considerations include ensuring identical thermal interfaces, using a common gate driver, and implementing a current sharing scheme to ensure equal current distribution among the devices.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IDH10G65C6XKSA1 Overview

Use the download button to access the IDH10G65C6XKSA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IDH10, or try a keyword search, such as Rectifier Diodes

Parts related to IDH10G65C6XKSA1

Showing 0 results