IDH16G120C5XKSA1 footprint, schematic symbol and 3D model by Infineon

Symbol

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PCB Footprints

IDH16G120C5XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-2-1

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3D Models

IDH16G120C5XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO220-2-1

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Datasheet Download Datasheet
Stock & Prices Price & Stock for IDH16G120C5XKSA1
Part Number IDH16G120C5XKSA1
Manufacturer Infineon
Pin Count 2
Part Category Schottky Diode
Package Category Transistor Outline, Vertical
Footprint Name Transistor Outline, Vertical - PG-TO220-2-1
Released Date Dec 13, 2019
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

IDH16G120C5XKSA1 Details

Manufacturer Part Number:
IDH16G120C5XKSA1
Pbfree Code:
Yes
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
TO-220, 2 PIN
Country Of Origin:
Austria, Malaysia
ECCN Code:
EAR99
Factory Lead Time:
26 Weeks
Manufacturer:
Infineon Technologies AG
YTEOL:
5
Additional Feature:
HIGH RELIABILITY, PD-CASE
Application:
EFFICIENCY
Breakdown Voltage-Min:
1200 V
Case Connection:
CATHODE
Configuration:
SINGLE
Diode Element Material:
SILICON CARBIDE
Diode Type:
RECTIFIER DIODE
Forward Voltage-Max (VF):
1.95 V
JEDEC-95 Code:
TO-220AC
JESD-30 Code:
R-PSFM-T2
JESD-609 Code:
e3
Non-rep Pk Forward Current-Max:
120 A
Number of Elements:
1
Number of Phases:
1
Number of Terminals:
2
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Output Current-Max:
40 A
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Power Dissipation-Max:
250 W
Rep Pk Reverse Voltage-Max:
1200 V
Reverse Current-Max:
80 µA
Reverse Test Voltage:
1200 V
Surface Mount:
NO
Technology:
SCHOTTKY
Terminal Finish:
Tin (Sn)
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE

IDH16G120C5XKSA1 Frequently Asked Questions (FAQs)

Infineon recommends a 2-layer or 4-layer PCB with a thermal via array under the device to improve heat dissipation. A minimum of 10 thermal vias with a diameter of 0.3 mm is recommended.
To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet. Additionally, ensure good thermal design and heat sinking to keep the junction temperature below 150°C.
Infineon recommends a gate drive circuit with a resistance of 10-20 ohms and a capacitance of 10-20 nF to achieve optimal switching performance. The gate drive voltage should be set to 12-15 V to ensure reliable switching.
To protect the device from overvoltage and overcurrent, Infineon recommends using a TVS diode or a voltage clamp to limit the voltage to 600 V or less. Additionally, a fuse or a current limiter can be used to prevent overcurrent conditions.
The recommended dead time for the IDH16G120C5XKSA1 is 100-200 ns to ensure reliable switching and prevent shoot-through currents.

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IDH16G120C5XKSA1 Overview

Use the download button to access the IDH16G120C5XKSA1 schematic symbol, PCB footprint, and 3D model.

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IDH16G120C5XKSA1 - Infineon

IDH16G120C5XKSA1 Details

IDH16G120C5XKSA1 Frequently Asked Questions (FAQs)

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