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IDL12G65C5XUMA2 - Infineon

Description: Silicon Carbide Schottky Diode, CoolSiC thinQ Gen V, Single, 600 V, 12 A, 18 nC, VSON

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IDL12G65C5XUMA2 - Infineon - PCB symbol
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PCB Footprints
IDL12G65C5XUMA2 - Infineon PCB footprint - Other - Other - VSON-4
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IDL12G65C5XUMA2 - Infineon - 3D model - Other - VSON-4
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IDL12G65C5XUMA2 Details

  • Manufacturer Part Number:

    IDL12G65C5XUMA2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    8 X 8 MM, GREEN, PLASTIC, THINPAK, VSON-4

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Non-rep Pk Forward Current-Max:

    50 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    12 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Power Dissipation-Max:

    138 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    190 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

IDL12G65C5XUMA2 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a proper biasing of the gate driver (VCC) to ensure optimal performance. A decoupling capacitor (e.g., 100nF) should be placed close to the VIN pin, and a separate power supply or a voltage regulator should be used for VCC.
  • The maximum allowed parasitic inductance in the gate drive circuit is typically around 5-10nH. Exceeding this value can lead to ringing and oscillations in the gate drive circuit, which can affect the device's performance and reliability.
  • A voltage supervisor or a voltage monitor IC can be used to detect overvoltage and undervoltage conditions. Additionally, a TVS (Transient Voltage Suppressor) diode can be used to protect the device from voltage transients and spikes.
  • The recommended gate resistance (RG) value is typically around 10-20 ohms. A lower RG value can lead to faster switching times, but may also increase the gate drive power consumption.

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IDL12G65C5XUMA2 Overview

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