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IDM08G120C5XTMA1 - Infineon

Description: Schottky Diodes & Rectifiers SIC CHIP/DISCRETE

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PCB Footprints
IDM08G120C5XTMA1 - Infineon PCB footprint - Other - Other - PG-TO252-2_2021
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3D Models
IDM08G120C5XTMA1 - Infineon  - 3D model - Other - PG-TO252-2_2021
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IDM08G120C5XTMA1 Details

  • Manufacturer Part Number:

    IDM08G120C5XTMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    1200 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.95 V

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    60 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    27 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Power Dissipation-Max:

    167 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    40 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

IDM08G120C5XTMA1 Frequently Asked Questions (FAQs)

  • Infineon recommends a PCB layout with a large copper area for heat dissipation, and a thermal via array under the device to improve heat transfer. A minimum of 2oz copper thickness is recommended.
  • Ensure proper heat sinking, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK, and follow the recommended PCB layout guidelines. Also, consider using a thermocouple to monitor the device temperature.
  • The maximum allowed voltage transient on the gate driver output is ±500 mV. Exceeding this may cause device damage or malfunction.
  • Yes, the IDM08G120C5XTMA1 can be used in a half-bridge configuration. However, ensure proper dead-time management and consider using a dedicated half-bridge driver IC for optimal performance.
  • The recommended gate resistance value is between 1 Ω and 10 Ω, depending on the specific application requirements and switching frequency.

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IDM08G120C5XTMA1 Overview

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Part Image IDM08G120C5 Infineon Technologies AG

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1200V V(RRM), Silicon Carbide, TO-252