Part Image

IDP12E120 - Infineon

Description: Diodes - General Purpose, Power, Switching FAST SWITCH EMCON DIODE 1200V 12A

Download IDP12E120 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IDP12E120 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-2
click to zoom
3D Models
IDP12E120 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-2
click to zoom

IDP12E120 Details

  • Manufacturer Part Number:

    IDP12E120

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AC

  • Package Description:

    TO-220, 2 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    PD-CASE

  • Application:

    FAST SOFT RECOVERY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    2.15 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    63 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    28 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    96 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    100 µA

  • Reverse Recovery Time-Max:

    0.15 µs

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDP12E120 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in the application note AN2019-01, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Additionally, consider using a thermal interface material (TIM) and a heat sink to reduce thermal resistance.
  • The IDP12E120 is designed to withstand voltage stress up to 1.5 times the maximum rated voltage (Vds) for a short duration (typically 100 ms). However, it's recommended to follow the recommended operating conditions and avoid voltage stress to ensure long-term reliability.
  • When selecting a gate driver for the IDP12E120, consider the driver's output current capability, rise and fall times, and voltage rating. Infineon recommends using a gate driver with a output current of at least 2 A and a voltage rating of 12 V or higher.
  • To ensure reliable operation, monitor the device's junction temperature (Tj), drain-source voltage (Vds), and drain current (Id). Additionally, monitor the gate-source voltage (Vgs) and gate current (Ig) to prevent overvoltage and overcurrent conditions.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IDP12E120 Overview

Use the download button to access the IDP12E120 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IDP12, or try a keyword search, such as Rectifier Diodes

Parts related to IDP12E120

Showing 0 results