Part Image

IDP18E120 - Infineon

Description: Diodes - General Purpose, Power, Switching FAST SWITCH EMCON DIODE 1200V 18A

Download IDP18E120 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IDP18E120 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-2
click to zoom
3D Models
IDP18E120 - Infineon  - 3D model - Transistor Outline, Vertical - TO-220-2
click to zoom

IDP18E120 Details

  • Manufacturer Part Number:

    IDP18E120

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AC

  • Package Description:

    TO-220, 2 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    PD-CASE

  • Application:

    FAST SOFT RECOVERY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    2.15 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    78 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    31 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    113 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    100 µA

  • Reverse Recovery Time-Max:

    0.195 µs

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDP18E120 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2019-01, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and implement a robust cooling system. Additionally, consider using a thermistor or temperature sensor to monitor the device temperature.
  • While the datasheet specifies the maximum rated voltage, it's essential to consider the voltage transient tolerance. According to Infineon's application note AN2019-02, the IDP18E120 can tolerate voltage transients up to 1.5 times the maximum rated voltage for a duration of 100 ms.
  • To minimize power loss in the gate drive circuit, use a low-impedance gate driver, optimize the gate resistance, and ensure a low-inductance layout. Additionally, consider using a gate driver with an integrated bootstrap diode to reduce power loss.
  • Infineon recommends using a human-body model (HBM) ESD protection circuit with a minimum rating of 2 kV. This can be achieved using external ESD protection devices or by implementing an on-chip ESD protection circuit.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IDP18E120 Overview

Use the download button to access the IDP18E120 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IDP18, or try a keyword search, such as Rectifier Diodes

Parts related to IDP18E120

Showing 0 results