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IDP30E60XKSA1 - Infineon

Description: Infineon 600V 52.3A, Silicon Junction Diode, 2-Pin TO-220 IDP30E60XKSA1

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Symbol
IDP30E60XKSA1 - Infineon - PCB symbol
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PCB Footprints
IDP30E60XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-2
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3D Models
IDP30E60XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO220-2
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IDP30E60XKSA1 Details

  • Manufacturer Part Number:

    IDP30E60XKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AC

  • Package Description:

    TO-220, 2 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    FAST RECOVERY

  • Application:

    FAST RECOVERY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    2 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    117 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    52.3 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    142.9 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    IEC-61249-2-21

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    50 µA

  • Reverse Recovery Time-Max:

    0.126 µs

  • Reverse Test Voltage:

    600 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDP30E60XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IDP30E60XKSA1 is -40°C to 150°C.
  • To ensure reliability, it is recommended to follow the thermal design guidelines provided by Infineon, and to implement proper thermal management, such as heat sinks and thermal interfaces, to keep the junction temperature within the recommended range.
  • The recommended gate drive voltage for the IDP30E60XKSA1 is 15V, but it can be operated with a gate drive voltage as low as 10V, depending on the specific application requirements.
  • To protect the IDP30E60XKSA1 from overvoltage and overcurrent, it is recommended to use a suitable overvoltage protection circuit, such as a transient voltage suppressor (TVS) or a voltage clamp, and to implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The recommended PCB layout and design considerations for the IDP30E60XKSA1 include using a multi-layer PCB with a solid ground plane, keeping the power traces short and wide, and using a Kelvin connection for the gate driver to minimize parasitic inductance.

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IDP30E60XKSA1 Overview

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