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IDV20E65D1XKSA1 - Infineon

Description: IDV20E65D1XKSA1 Infineon Switching Diode, 650V 28A, 92ns, 2-Pin TO-220FP

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IDV20E65D1XKSA1 - Infineon - PCB symbol
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PCB Footprints
IDV20E65D1XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-2 -22
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3D Models
IDV20E65D1XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO220-2 -22
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IDV20E65D1XKSA1 Details

  • Manufacturer Part Number:

    IDV20E65D1XKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE, PD-CASE

  • Application:

    ULTRA FAST RECOVERY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    120 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    28 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    38 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    40 µA

  • Reverse Recovery Time-Max:

    0.065 µs

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDV20E65D1XKSA1 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • To ensure EMC, use a shielded cable for the output, keep the device away from high-frequency sources, and use a common-mode choke or ferrite bead on the input lines. Additionally, follow the recommended PCB layout and grounding scheme.
  • The maximum allowed voltage deviation on the input pins is ±10% of the nominal input voltage. Exceeding this limit may affect the device's performance or even cause damage.
  • Implement OVP and UVP circuits externally using zener diodes, resistors, and a comparator. The OVP threshold should be set to 1.5 times the nominal input voltage, and the UVP threshold should be set to 0.7 times the nominal input voltage.
  • A low-ESR ceramic capacitor with a value of 10-22 μF is recommended for the input. The capacitor should be placed as close to the device as possible to minimize inductance and ensure stable operation.

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IDV20E65D1XKSA1 Overview

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Part Image IDV20E65D1 Infineon Technologies AG

Rectifier Diode, 1 Phase, 1 Element, 28A, 650V V(RRM), Silicon, TO-220AC