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IDW30E65D1 - Infineon

Description: Diodes - General Purpose, Power, Switching IGBT PRODUCTS Rapid Switching

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PCB Footprints
IDW30E65D1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 247
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3D Models
IDW30E65D1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO 247
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IDW30E65D1 Details

  • Manufacturer Part Number:

    IDW30E65D1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    FREE WHEELING DIODE, PD-CASE

  • Application:

    ULTRA FAST RECOVERY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    240 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    60 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    142 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    40 µA

  • Reverse Recovery Time-Max:

    0.115 µs

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDW30E65D1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in the application note AN2019-01, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The driver should also have a suitable propagation delay and rise/fall time to ensure proper switching.
  • The IDW30E65D1 has an internal overcurrent protection (OCP) feature that trips at 30A. The OCP is designed to protect the IGBT from excessive current, but it's not a substitute for proper system design and protection. External overcurrent protection should still be implemented to ensure system reliability.
  • Proper cooling and heat dissipation are critical for the IDW30E65D1. Ensure good thermal contact between the module and the heat sink, and use a heat sink with a thermal resistance of ≤ 0.5 K/W. Also, consider using a thermal interface material (TIM) to fill any gaps between the module and heat sink.
  • Store the IDW30E65D1 in a dry, cool place, away from direct sunlight and moisture. Handle the module by the edges, avoiding touching the electrical contacts or components. Use an anti-static wrist strap or mat when handling the module to prevent electrostatic discharge (ESD) damage.

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IDW30E65D1 Overview

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Part Image IDW30E65D1FKSA1 Infineon Technologies AG

Rectifier Diode, 1 Phase, 1 Element, 60A, 650V V(RRM), Silicon, TO-247