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IDW40E65D2 - Infineon

Description: IDW40E65 - SILICON POWER DIODE

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Symbol
IDW40E65D2 - Infineon - PCB symbol
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PCB Footprints
IDW40E65D2 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 247-3_
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3D Models
IDW40E65D2 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO 247-3_
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IDW40E65D2 Details

  • Manufacturer Part Number:

    IDW40E65D2

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    PD-CASE

  • Application:

    FAST SOFT RECOVERY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    2.3 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    250 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    80 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Power Dissipation-Max:

    180 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    40 µA

  • Reverse Recovery Time-Max:

    0.075 µs

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

IDW40E65D2 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to ensure efficient heat dissipation.
  • Use a thermal interface material (TIM) with a high thermal conductivity, ensure good thermal contact between the device and heat sink, and consider using a heat sink with a high thermal conductivity.
  • Use 100nF to 1uF ceramic capacitors with a voltage rating of 10V to 25V, placed as close as possible to the device's power pins.
  • Ensure that the device's power supplies are sequenced correctly, with the core voltage (VCC) being powered up before the I/O voltage (VIO). A power sequencing circuit or a dedicated power management IC can be used to ensure correct sequencing.
  • Use ESD protection diodes or TVS diodes with a voltage rating of 10V to 25V, placed as close as possible to the device's I/O pins. Ensure that the PCB layout minimizes the distance between the ESD protection devices and the device's I/O pins.

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IDW40E65D2 Overview

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