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IGC019S06S1XTMA1 - Infineon

Description: GaN FETs CoolGaN Transistor 60 V G3 in PQFN 3x5, 1.3 mohm

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PCB Footprints
IGC019S06S1XTMA1 - Infineon PCB footprint - Other - Other - PG-TSON-6-2
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3D Models
IGC019S06S1XTMA1 - Infineon  - 3D model - Other - PG-TSON-6-2
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IGC019S06S1XTMA1 Details

  • Manufacturer Part Number:

    IGC019S06S1XTMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TSON-6

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    99 A

  • Drain-source On Resistance-Max:

    0.0019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22 pF

  • JESD-30 Code:

    R-PTSO-N6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    700 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    TRIPLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

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IGC019S06S1XTMA1 Overview

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