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IGC037S12S1XTMA1 - Infineon

Description: N-Channel 120 V 19A (Ta), 71A (Tc) 3.3W (Ta), 45W (Tc) Surface Mount PG-TSON-6-2 , -40°C ~ 150°C (TJ)

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IGC037S12S1XTMA1 - Infineon PCB footprint - Other - Other - PG-TSON-6-2
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IGC037S12S1XTMA1 - Infineon  - 3D model - Other - PG-TSON-6-2
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IGC037S12S1XTMA1 Details

  • Manufacturer Part Number:

    IGC037S12S1XTMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TSON-6

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    120 V

  • Drain Current-Max (ID):

    71 A

  • Drain-source On Resistance-Max:

    0.0037 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JESD-30 Code:

    R-PTSO-N6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    520 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    TRIPLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

IGC037S12S1XTMA1 Frequently Asked Questions (FAQs)

  • Infineon provides a reference design and layout guidelines in their application notes and evaluation boards. It's essential to follow these guidelines to ensure proper thermal management and minimize parasitic inductances. Additionally, a thermal pad on the bottom of the package should be connected to a heat sink or a thermal vias to dissipate heat efficiently.
  • The selection of a suitable gate driver depends on the specific application requirements, such as the switching frequency, voltage, and current. Infineon recommends using their dedicated gate driver ICs, such as the 1EDC or EiceDRIVER series, which are designed to work seamlessly with their IGBT modules. The datasheet and application notes provide guidance on selecting the right gate driver.
  • Infineon provides detailed soldering and assembly guidelines in their application notes and package datasheets. It's essential to follow these guidelines to ensure reliable connections and to prevent damage to the module. The recommended soldering temperature profile and assembly procedures should be strictly followed to ensure the module's performance and reliability.
  • Infineon recommends implementing overvoltage and overcurrent protection circuits to prevent damage to the IGBT module. This can include using voltage clamping devices, such as TVS diodes, and current sensing resistors to detect overcurrent conditions. The application notes and datasheet provide guidance on designing these protection circuits.
  • Infineon provides reliability data and lifetime expectations for their IGBT modules in their datasheets and application notes. The module's reliability is dependent on various factors, such as operating conditions, temperature, and switching frequency. By following the recommended operating conditions and design guidelines, the IGBT module can achieve a long and reliable lifetime.

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IGC037S12S1XTMA1 Overview

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