IGLD65R080D2 - Infineon

IGLD65R080D2 Details

• Manufacturer Part Number:

  IGLD65R080D2

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Package Description:

  LSON-8 PIN

• Country Of Origin:

  Austria, Philippines

• ECCN Code:

  EAR99

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  10

• Case Connection:

  SOURCE

• Configuration:

  SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

• DS Breakdown Voltage-Min:

  650 V

• Drain Current-Max (ID):

  18 A

• Drain-source On Resistance-Max:

  0.096 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  0.44 pF

• JESD-30 Code:

  S-PDSO-N8

• Moisture Sensitivity Level:

  3

• Number of Elements:

  1

• Number of Terminals:

  8

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  SQUARE

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  66 W

• Pulsed Drain Current-Max (IDM):

  42 A

• Surface Mount:

  YES

• Terminal Form:

  NO LEAD

• Terminal Position:

  DUAL

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  GALLIUM NITRIDE