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IGO60R070D1 - Infineon

Description: Infineon GAN HV

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IGO60R070D1 Details

  • Manufacturer Part Number:

    IGO60R070D1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    DSO-20-85, 20 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Date Of Intro:

    2018-11-06

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.3 pF

  • JESD-30 Code:

    R-PDSO-G20

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    20

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IGO60R070D1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for IGO60R070D1 is 150°C, but it's recommended to operate at a maximum of 125°C for reliable and long-term operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, ensuring good thermal contact between the device and heat sink, and providing adequate airflow.
  • The recommended gate resistance (Rg) for IGO60R070D1 is ≤ 10 Ω to ensure proper switching performance and minimize oscillations.
  • Yes, IGO60R070D1 can be used in a parallel configuration, but it's essential to ensure that the devices are properly synchronized and matched to avoid uneven current sharing and potential oscillations.
  • The maximum allowed dv/dt for IGO60R070D1 is 10 kV/μs, but it's recommended to limit it to 5 kV/μs to ensure reliable operation and minimize the risk of failure.

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