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IGOT60R070D1AUMA1 - Infineon

Description: MOSFET 600V CoolGaN Power Transistor

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IGOT60R070D1AUMA1 - Infineon PCB footprint - Other - Other - PG-DSO-20-87
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IGOT60R070D1AUMA1 Details

  • Manufacturer Part Number:

    IGOT60R070D1AUMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    0.3 pF

  • JESD-30 Code:

    R-PDSO-G20

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    20

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

IGOT60R070D1AUMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IGOT60R070D1AUMA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the module within a temperature range of 25°C to 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide a good thermal interface between the module and the heat sink. Apply a thin layer of thermal interface material (TIM) to the base plate, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the IGOT60R070D1AUMA1 is between 10 ohms to 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the IGOT60R070D1AUMA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential oscillations.
  • The recommended dead time for the IGOT60R070D1AUMA1 is typically in the range of 100 ns to 500 ns, depending on the specific application and switching frequency. A longer dead time can help prevent cross-conduction and reduce electromagnetic interference (EMI).

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IGOT60R070D1AUMA1 Overview

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