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IGP20N65H5 - Infineon

Description: IGBT Transistors IGBT PRODUCTS TrenchStop 5

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PCB Footprints
IGP20N65H5 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-3
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3D Models
IGP20N65H5 - Infineon  - 3D model - Transistor Outline, Vertical - TO-220-3
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IGP20N65H5 Details

  • Manufacturer Part Number:

    IGP20N65H5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    42 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    218 ns

  • Turn-on Time-Nom (ton):

    28 ns

  • VCEsat-Max:

    2.1 V

IGP20N65H5 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IGP20N65H5 is typically defined by the device's voltage and current ratings. According to the datasheet, the maximum drain-source voltage (Vds) is 650V, and the maximum drain current (Id) is 20A. However, it's essential to consider the device's thermal limitations and ensure that the operating conditions do not exceed the maximum junction temperature (Tj) of 175°C.
  • Proper cooling is crucial for the IGP20N65H5 to operate within its safe operating area. Ensure that the device is mounted on a suitable heat sink with a low thermal resistance (Rth) and that the heat sink is properly attached to the device. The datasheet provides thermal resistance values for the device, which can be used to calculate the maximum allowed power dissipation. Additionally, consider using a thermal interface material (TIM) to reduce the thermal resistance between the device and the heat sink.
  • The recommended gate drive voltage for the IGP20N65H5 is typically between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and the desired switching performance. It's essential to ensure that the gate drive voltage is within the recommended range to prevent damage to the device and to achieve optimal switching performance.
  • To protect the IGP20N65H5 from overvoltage and overcurrent conditions, consider implementing overvoltage protection (OVP) and overcurrent protection (OCP) circuits in your design. These circuits can be implemented using external components such as zener diodes, resistors, and fuses. Additionally, ensure that the device is operated within its safe operating area and that the maximum ratings are not exceeded.
  • The typical turn-on and turn-off times for the IGP20N65H5 are not explicitly stated in the datasheet. However, the datasheet provides the device's switching characteristics, such as the rise time (tr) and fall time (tf), which can be used to estimate the turn-on and turn-off times. Typically, the turn-on time is around 10-20 ns, and the turn-off time is around 20-30 ns, depending on the gate drive voltage and the load conditions.

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