IGT60R190D1S - Infineon

IGT60R190D1S Details

• Manufacturer Part Number:

  IGT60R190D1S

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Obsolete

• ECCN Code:

  EAR99

• Date Of Intro:

  2018-11-06

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  0

• Case Connection:

  DRAIN

• Configuration:

  SINGLE

• DS Breakdown Voltage-Min:

  600 V

• Drain Current-Max (ID):

  12.5 A

• Drain-source On Resistance-Max:

  0.19 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  0.15 pF

• JESD-30 Code:

  R-PSSO-F3

• Number of Elements:

  1

• Number of Terminals:

  3

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  NOT SPECIFIED

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  55.5 W

• Pulsed Drain Current-Max (IDM):

  23 A

• Surface Mount:

  YES

• Terminal Form:

  FLAT

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  NOT SPECIFIED

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  GALLIUM NITRIDE