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IGW60T120 - Infineon

Description: Trans IGBT Chip N-CH 1.2KV 100A 3-Pin TO-247 Tube

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PCB Footprints
IGW60T120 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO247-3
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3D Models
IGW60T120 - Infineon  - 3D model - Transistor Outline, Vertical - TO247-3
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IGW60T120 Details

  • Manufacturer Part Number:

    IGW60T120

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247AD

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    100 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    730 ns

  • Turn-on Time-Nom (ton):

    95 ns

IGW60T120 Frequently Asked Questions (FAQs)

  • The maximum allowed overcurrent for the IGW60T120 is 2 times the nominal current (120A) for a maximum of 1 second, but it's recommended to stay within the nominal current rating for reliable operation.
  • Proper thermal management can be achieved by ensuring good heat sink contact, using a thermal interface material, and maintaining a maximum junction temperature of 150°C. A heat sink with a thermal resistance of 0.5 K/W or lower is recommended.
  • The recommended gate resistor value for the IGW60T120 is between 10 ohms and 20 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI).
  • Yes, the IGW60T120 can be used in a parallel configuration, but it's essential to ensure that the modules are matched in terms of electrical characteristics and thermal performance. Additionally, a master-slave configuration is recommended to ensure proper current sharing.
  • The maximum allowed voltage imbalance between the DC links in a 3-phase inverter application is ±10% of the nominal DC link voltage. Exceeding this limit can lead to uneven current sharing and reduced system reliability.

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IGW60T120 Overview

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