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IHW25N120E1XKSA1 - Infineon

Description: INFINEON - IHW25N120E1XKSA1 - IGBT, SINGLE, 1.2KV, 50A, TO-247

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Symbol
IHW25N120E1XKSA1 - Infineon - PCB symbol
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PCB Footprints
IHW25N120E1XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247-3_1
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3D Models
IHW25N120E1XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO247-3_1
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IHW25N120E1XKSA1 Details

  • Manufacturer Part Number:

    IHW25N120E1XKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    1677 ns

IHW25N120E1XKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IHW25N120E1XKSA1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power loss of the device, and the TIM should have a thermal conductivity of at least 5 W/mK.
  • The recommended gate drive voltage for the IHW25N120E1XKSA1 is between 10 V and 15 V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • To protect the IHW25N120E1XKSA1 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a surge protector to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
  • The recommended PCB layout and design considerations for the IHW25N120E1XKSA1 include using a multi-layer PCB with a solid ground plane, minimizing the length of the power traces, and using a Kelvin connection for the gate driver. It's also recommended to follow the guidelines outlined in the datasheet and application notes.

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IHW25N120E1XKSA1 Overview

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