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IHW30N120R2 - Infineon

Description: IGBT NPT, Trench Field Stop 1200 V 60 A 390 W Through Hole PG-TO247-3-1

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PCB Footprints
IHW30N120R2 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO-247-3
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3D Models
IHW30N120R2 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO-247-3
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IHW30N120R2 Details

  • Manufacturer Part Number:

    IHW30N120R2

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247AD

  • Package Description:

    GREEN, PLASTIC, TO-247, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    390 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    900 ns

IHW30N120R2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IHW30N120R2 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the IHW30N120R2 is typically in the range of 10-20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the IHW30N120R2 is a high-reliability device suitable for demanding applications. It's manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To protect the IHW30N120R2 from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator and overcurrent protection circuitry. Additionally, ensure the device is operated within its specified voltage and current ratings, and consider using a fuse or circuit breaker to prevent damage from excessive currents.

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IHW30N120R2 Overview

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