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IKQ150N65EH7 - Infineon

Description: IGBT Trench Field Stop 650 V 160 A 621 W Through Hole PG-TO247-3-46 , -40°C ~ 175°C (TJ)

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PCB Footprints
IKQ150N65EH7 - Infineon PCB footprint - Other - Other - PG-TO247-3-PLUS-NN3.7
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3D Models
IKQ150N65EH7 - Infineon  - 3D model - Other - PG-TO247-3-PLUS-NN3.7
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IKQ150N65EH7 Details

  • Manufacturer Part Number:

    IKQ150N65EH7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO247-3-PLUS-NN3.7, 3 PIN

  • Country Of Origin:

    Germany, Mainland China, Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Collector Current-Max (IC):

    160 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    621 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    461 ns

  • Turn-on Time-Nom (ton):

    124 ns

  • VCEsat-Max:

    1.65 V

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IKQ150N65EH7 Overview

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