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IKW75N60T - Infineon

Description: IGBT Transistors LOW LOSS DuoPack 600V 75A

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PCB Footprints
IKW75N60T - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 247-3
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3D Models
IKW75N60T - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO 247-3
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IKW75N60T Details

  • Manufacturer Part Number:

    IKW75N60T

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247AD

  • Pin Count:

    3

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    HIGH SWITCHING SPEED

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    428 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    401 ns

  • Turn-on Time-Nom (ton):

    69 ns

IKW75N60T Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IKW75N60T is -40°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
  • The recommended gate resistor value for the IKW75N60T is typically between 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IKW75N60T can be used in a parallel configuration to increase current handling, but ensure that the devices are properly matched and the layout is designed to minimize current imbalance.
  • Use a suitable overvoltage protection circuit, such as a TVS diode or a zener diode, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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