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IKY75N120CH3XKSA1 - Infineon

Description: IGBT Transistors INDUSTRY 14 IGBT - 1200 V 150 A 938 W Through Hole PG-TO247-4

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IKY75N120CH3XKSA1 - Infineon - PCB symbol
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IKY75N120CH3XKSA1 - Infineon PCB footprint - Other - Other - PG-TO247-4-2_1
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IKY75N120CH3XKSA1 - Infineon - 3D model - Other - PG-TO247-4-2_1
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IKY75N120CH3XKSA1 Details

  • Manufacturer Part Number:

    IKY75N120CH3XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Collector Current-Max (IC):

    150 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    468 ns

  • Turn-on Time-Nom (ton):

    73 ns

IKY75N120CH3XKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature is 150°C, but it's recommended to keep it below 125°C for reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 1.5°C/W or lower, and ensuring good airflow around the device.
  • The recommended gate resistor value is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, the IKY75N120CH3XKSA1 is suitable for high-reliability applications, but it's essential to follow the recommended operating conditions and design guidelines to ensure reliable operation.
  • Use a suitable overvoltage protection circuit, such as a TVS diode or a zener diode, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IKY75N120CH3XKSA1 Overview

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About Infineon

Infineon Technologies develops semiconductor products for power conversion, control, sensing, connectivity, and security. Its portfolio includes power transistors, gate drivers, microcontrollers, sensors, communication devices, and supporting software. Power semiconductor technologies span silicon, silicon carbide, and gallium nitride, providing options for different switching, voltage, and efficiency requirements.

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