IMBG65R022M1H - Infineon

IMBG65R022M1H Details

• Manufacturer Part Number:

  IMBG65R022M1H

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Not Recommended

• Country Of Origin:

  Austria, Malaysia

• ECCN Code:

  EAR99

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  3

• Additional Feature:

  HIGH RELIABILITY

• Avalanche Energy Rating (Eas):

  350 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

• DS Breakdown Voltage-Min:

  650 V

• Drain Current-Max (ID):

  64 A

• Drain-source On Resistance-Max:

  0.03 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  24 pF

• JEDEC-95 Code:

  TO-263

• JESD-30 Code:

  R-PSSO-G7

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  7

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  300 W

• Pulsed Drain Current-Max (IDM):

  194 A

• Surface Mount:

  YES

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON CARBIDE