IMDQ65R020M2H - Infineon

IMDQ65R020M2H Details

• Manufacturer Part Number:

  IMDQ65R020M2H

• Part Life Cycle Code:

  Active

• Package Description:

  HDSOP, DPAK-22

• Country Of Origin:

  Austria, Malaysia

• ECCN Code:

  EAR99

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  7

• Avalanche Energy Rating (Eas):

  272 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  650 V

• Drain Current-Max (ID):

  97 A

• Drain-source On Resistance-Max:

  0.024 Ω

• FET Technology:

  TRENCH MOSFET

• Feedback Cap-Max (Crss):

  11.5 pF

• JESD-30 Code:

  R-PDSO-G22

• Number of Elements:

  1

• Number of Terminals:

  22

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Packing Method:

  TAPE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  394 W

• Pulsed Drain Current-Max (IDM):

  291 A

• Surface Mount:

  YES

• Terminal Form:

  GULL WING

• Terminal Position:

  DUAL

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON CARBIDE