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IMW120R020M1HXKSA1 - Infineon

Description: N-Channel 1200 V 98A (Tc) 375W (Tc) Through Hole PG-TO247-3

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IMW120R020M1HXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247-3_2024-11
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IMW120R020M1HXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO247-3_2024-11
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IMW120R020M1HXKSA1 Details

  • Manufacturer Part Number:

    IMW120R020M1HXKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    721 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    98 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    23 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Pulsed Drain Current-Max (IDM):

    213 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

IMW120R020M1HXKSA1 Frequently Asked Questions (FAQs)

  • Infineon recommends a 2-layer or 4-layer PCB with a thermal via array under the device to ensure optimal thermal performance. A minimum of 10 thermal vias with a diameter of 0.3 mm is recommended.
  • Proper cooling can be achieved by using a heat sink with a thermal interface material (TIM) and ensuring good airflow around the device. The heat sink should be designed to minimize thermal resistance and ensure good thermal contact with the device.
  • Infineon recommends a soldering profile with a peak temperature of 260°C, a dwell time above 217°C of 60-90 seconds, and a cooling rate of 4-6°C/s. The device should be soldered using a no-clean flux and a solder alloy with a melting point above 217°C.
  • The device should be stored in a dry, cool place away from direct sunlight. It should be handled with anti-static precautions, such as using an anti-static wrist strap or mat, and should not be exposed to mechanical stress or vibration during shipping.
  • The IMW120R020M1HXKSA1 is manufactured according to Infineon's quality and reliability standards, which include ISO/TS 16949, ISO 9001, and AEC-Q100. The device is also qualified according to the Automotive Electronics Council (AEC) Q100 standard.

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IMW120R020M1HXKSA1 Overview

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