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IMW120R030M1HXKSA1 - Infineon

Description: MOSFET SIC DISCRETE

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PCB Footprints
IMW120R030M1HXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 247-3
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3D Models
IMW120R030M1HXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO 247-3
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IMW120R030M1HXKSA1 Details

  • Manufacturer Part Number:

    IMW120R030M1HXKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    56 A

  • Drain-source On Resistance-Max:

    0.056 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    13 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    227 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

IMW120R030M1HXKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IMW120R030M1HXKSA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 10 K/W, and ensuring good airflow around the device.
  • A recommended PCB layout for the IMW120R030M1HXKSA1 includes a solid ground plane, wide power traces, and a decoupling capacitor (e.g., 100nF) close to the device.
  • The device requires a specific power sequencing order: VCC, then VBOOT, then VIN. Ensure that VCC is powered up before VBOOT, and VBOOT is powered up before VIN.
  • The IMW120R030M1HXKSA1 has built-in ESD protection, but it's still recommended to follow standard ESD handling precautions when handling the device, such as using an ESD wrist strap or mat.

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IMW120R030M1HXKSA1 Overview

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