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IMW120R045M1 - Infineon

Description: N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3-41

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Symbol
IMW120R045M1 - Infineon - PCB symbol
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PCB Footprints
IMW120R045M1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 247
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3D Models
IMW120R045M1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO 247
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IMW120R045M1 Details

  • Manufacturer Part Number:

    IMW120R045M1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-01-29

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    52 A

  • Drain-source On Resistance-Max:

    0.059 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    13 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    228 W

  • Pulsed Drain Current-Max (IDM):

    130 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

IMW120R045M1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IMW120R045M1 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to implement adequate cooling mechanisms to prevent overheating.
  • The recommended PCB layout and thermal design for the IMW120R045M1 can be found in the Infineon application note AN2013-01, which provides detailed guidelines for optimal thermal performance.
  • When selecting a gate driver for the IMW120R045M1, consider factors such as the driver's output current capability, switching frequency, and voltage rating. Infineon recommends using a gate driver with a high current capability and a low propagation delay.
  • Critical parameters to monitor during operation include the device temperature, voltage, and current. It's essential to implement adequate monitoring and protection mechanisms to prevent overheating, overvoltage, and overcurrent conditions.

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IMW120R045M1 Overview

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