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IMZA120R007M1HXKSA1 - Infineon

Description: CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

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IMZA120R007M1HXKSA1 - Infineon PCB footprint - Other - Other - PG-TO247-4-STD-T3.7
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3D Models
IMZA120R007M1HXKSA1 - Infineon  - 3D model - Other - PG-TO247-4-STD-T3.7
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IMZA120R007M1HXKSA1 Details

  • Manufacturer Part Number:

    IMZA120R007M1HXKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    638 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    225 A

  • Drain-source On Resistance-Max:

    0.0111 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    61 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    750 W

  • Pulsed Drain Current-Max (IDM):

    504 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

IMZA120R007M1HXKSA1 Frequently Asked Questions (FAQs)

  • Infineon recommends a 2-layer or 4-layer PCB with a thermal via array under the device to ensure optimal thermal performance. A minimum of 10 thermal vias with a diameter of 0.3 mm is recommended.
  • Infineon recommends using a reflow soldering process with a peak temperature of 260°C for 20-30 seconds. The device should be placed on a solder paste layer with a thickness of 0.1-0.2 mm.
  • The recommended operating voltage range for the IMZA120R007M1HXKSA1 is 12-14 V, with a maximum voltage of 15 V for short-term operation.
  • Infineon recommends using a fuse or a current limiter to protect the device from overcurrent. Additionally, a voltage clamp or a TVS diode can be used to protect the device from overvoltage.
  • The maximum junction temperature for the IMZA120R007M1HXKSA1 is 150°C. Operating the device above this temperature can reduce its lifespan and affect its performance.

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IMZA120R007M1HXKSA1 Overview

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