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INA213BQDCKRQ1 - Texas Instruments

Description: Automotive, 26-V, Bi-Directional, Zero-Drift, Precision, Low-/High-Side, Volt. Out Current Sense Amp

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PCB Footprints
INA213BQDCKRQ1 - Texas Instruments PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - DCK(R-PDSO-G6)_
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3D Models
INA213BQDCKRQ1 - Texas Instruments  - 3D model - SOT23 (6-Pin) - DCK(R-PDSO-G6)_
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INA213BQDCKRQ1 Details

  • Manufacturer Part Number:

    INA213BQDCKRQ1

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.33.00.01

  • Date Of Intro:

    2016-05-01

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Amplifier Type:

    OPERATIONAL AMPLIFIER

  • Architecture:

    VOLTAGE-FEEDBACK

  • Bias Current-Max (IIB) @25C:

    35 µA

  • Common Mode Voltage-Max:

    26 V

  • Common-mode Reject Ratio-Min:

    100 dB

  • Common-mode Reject Ratio-Nom:

    120 dB

  • Frequency Compensation:

    YES

  • Input Offset Voltage-Max:

    100 µV

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e4

  • Length:

    2 mm

  • Low-Bias:

    NO

  • Low-Offset:

    YES

  • Micropower:

    YES

  • Moisture Sensitivity Level:

    2

  • Number of Functions:

    1

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSSOP

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Power:

    NO

  • Programmable Power:

    NO

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    1.1 mm

  • Slew Rate-Nom:

    0.4 V/us

  • Supply Current-Max:

    0.115 mA

  • Supply Voltage Limit-Max:

    26 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.65 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Unity Gain BW-Nom:

    80

  • Voltage Gain-Nom:

    50

  • Wideband:

    NO

  • Width:

    1.25 mm

INA213BQDCKRQ1 Frequently Asked Questions (FAQs)

  • A good PCB layout for the INA213BQDCKRQ1 involves keeping the input and output traces short and away from noise sources, using a solid ground plane, and placing decoupling capacitors close to the device. TI provides a recommended layout in the datasheet and application notes.
  • The INA213BQDCKRQ1 is rated for operation from -40°C to 125°C. Ensure good thermal design, including heat sinking and airflow, to keep the device within its specified temperature range. Monitor the device's junction temperature (TJ) to prevent overheating.
  • The INA213BQDCKRQ1 can operate with input common-mode voltages from -0.1V to VCC-1.5V. However, for optimal performance, it's recommended to keep the input common-mode voltage within 1V of the supply voltage (VCC).
  • Use a combination of passive filtering (e.g., RC filters) and shielding to reduce noise and interference. Place the INA213BQDCKRQ1 close to the signal source, and use a low-pass filter or a ferrite bead to filter out high-frequency noise.
  • The INA213BQDCKRQ1 can withstand input voltages up to ±40V without damage. However, for optimal performance, it's recommended to keep the input voltage within the specified range of ±10V.

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INA213BQDCKRQ1 Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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