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INA310B3IDGKR - Texas Instruments

Description: Wide common-mode voltage: – Operational voltage: −4 V to +110 V – Survival voltage: −20 V to +120 V • High signal bandwidth: 1.3 MHz • Slew rate: 2.5 V/µs • Excellent CMRR: 160 dB • Accuracy – Gain error (maximum) • Version A: 0.15%, 10 ppm/°C drift • Version B: 0.5%, 20 ppm/°C drift – Offset voltage (maximum) • Version A: ±20 µV, ±0.25 µV/°C drift • Version B: ±150 µV, ±1 µV/°C drift • On-board open-drain comparator • Internal comparator voltage reference: 0.6 V • Propagation delay time: 1 µ

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INA310B3IDGKR - Texas Instruments PCB footprint - Small Outline Packages - Small Outline Packages - VSSOP - 1.1 mm max height
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INA310B3IDGKR - Texas Instruments  - 3D model - Small Outline Packages - VSSOP - 1.1 mm max height
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INA310B3IDGKR Details

  • Manufacturer Part Number:

    INA310B3IDGKR

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.33.00.01

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Amplifier Type:

    OPERATIONAL AMPLIFIER

  • Architecture:

    VOLTAGE-FEEDBACK

  • Average Bias Current-Max (IIB):

    30 µA

  • Bias Current-Max (IIB) @25C:

    30 µA

  • Common-mode Reject Ratio-Min:

    120 dB

  • Common-mode Reject Ratio-Nom:

    140 dB

  • Frequency Compensation:

    YES

  • Input Offset Voltage-Max:

    150 µV

  • JESD-30 Code:

    S-PDSO-G8

  • JESD-609 Code:

    e4

  • Length:

    3 mm

  • Low-Bias:

    NO

  • Low-Offset:

    YES

  • Micropower:

    NO

  • Moisture Sensitivity Level:

    2

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSSOP

  • Package Equivalence Code:

    TSSOP8,.19

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

  • Packing Method:

    TR, 13 INCH

  • Peak Reflow Temperature (Cel):

    260

  • Power:

    NO

  • Programmable Power:

    NO

  • Seated Height-Max:

    1.1 mm

  • Slew Rate-Nom:

    2.5 V/us

  • Supply Current-Max:

    2.25 mA

  • Supply Voltage Limit-Max:

    22 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.65 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Unity Gain BW-Nom:

    1000

  • Wideband:

    NO

  • Width:

    3 mm

INA310B3IDGKR Frequently Asked Questions (FAQs)

  • The maximum voltage that can be applied to the input pins of the INA310B3IDGKR is 28V. Exceeding this voltage can cause damage to the device.
  • To ensure accurate measurements, it is essential to follow proper layout and grounding techniques, minimize noise and interference, and use a suitable input filter to reject high-frequency noise.
  • The INA310B3IDGKR's performance can be affected by temperature. The device's offset voltage, gain, and bandwidth can vary with temperature. It is essential to consider these variations when designing the application.
  • The INA310B3IDGKR is designed for low-current sensing applications. It is not suitable for high-current sensing applications. For high-current sensing, consider using a device with a higher current rating, such as the INA240 or INA250.
  • The power consumption of the INA310B3IDGKR can be calculated using the formula: Power (mW) = (Vsupply x Iq) + (Vsupply x Iin x Rgain), where Vsupply is the supply voltage, Iq is the quiescent current, Iin is the input current, and Rgain is the gain resistance.

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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