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IPA126N10NM3SXKSA1 - Infineon

Description: MOSFET N-CH 100V 39A TO220

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IPA126N10NM3SXKSA1 Details

  • Manufacturer Part Number:

    IPA126N10NM3SXKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220 FP, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.0126 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    14 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    33 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Reference Standard:

    IEC-68-1; IEC-61249-2-21

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA126N10NM3SXKSA1 Frequently Asked Questions (FAQs)

  • The IPA126N10NM3SXKSA1 can operate from -40°C to 150°C (TJ), but the maximum junction temperature (TJ) should not exceed 150°C for reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1.5 K/W, and ensuring good airflow around the device. The device's thermal pad should be connected to a solid ground plane to aid in heat dissipation.
  • A recommended PCB layout for the IPA126N10NM3SXKSA1 includes a solid ground plane, short and wide traces for power and signal lines, and a thermal relief pattern for the thermal pad. The datasheet provides a recommended land pattern and PCB layout guidelines.
  • To protect the IPA126N10NM3SXKSA1 from ESD, handle the device by the body or pins, use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment. The device has an ESD rating of 2 kV human body model (HBM) and 150 V machine model (MM).
  • The recommended gate drive voltage for the IPA126N10NM3SXKSA1 is between 10 V and 15 V, with a maximum gate-source voltage of 20 V. A higher gate drive voltage can improve switching performance, but may also increase power losses.

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IPA126N10NM3SXKSA1 Overview

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