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IPA50R950CEXKSA2 - Infineon

Description: N-Channel 500 V 3.7A (Tc) 25.7W (Tc) Through Hole PG-TO220-3-FP

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PCB Footprints
IPA50R950CEXKSA2 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 220 fullpack
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3D Models
IPA50R950CEXKSA2 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO 220 fullpack
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IPA50R950CEXKSA2 Details

  • Manufacturer Part Number:

    IPA50R950CEXKSA2

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    68 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain-source On Resistance-Max:

    0.95 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    12.8 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA50R950CEXKSA2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IPA50R950CEXKSA2 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling of the IPA50R950CEXKSA2 is crucial to prevent overheating. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1.5 K/W. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended PCB layout for the IPA50R950CEXKSA2 involves using a 4-layer PCB with a solid ground plane, and placing the device on the top layer. Ensure that the drain and source pins are connected to the PCB with low-inductance paths, and use a Kelvin connection for the gate driver. Refer to the Infineon application note AN2013-01 for more details.
  • Yes, the IPA50R950CEXKSA2 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled, and the PCB layout is optimized for high-frequency operation. Additionally, consider using a gate driver with a low output impedance to minimize switching losses.
  • To protect the IPA50R950CEXKSA2 from overvoltage and overcurrent, use a voltage clamp or a TVS diode to limit the voltage across the device. Additionally, use a current sense resistor and a comparator to detect overcurrent conditions, and implement a shutdown mechanism to turn off the device in case of an overcurrent event.

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IPA50R950CEXKSA2 Overview

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