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IPA60R120P7XKSA1 - Infineon

Description: MOSFET HIGH POWER_NEW

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IPA60R120P7XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPA60R120P7XKSA1-+-
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IPA60R120P7XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - IPA60R120P7XKSA1-+-
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IPA60R120P7XKSA1 Details

  • Manufacturer Part Number:

    IPA60R120P7XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    82 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain-source On Resistance-Max:

    0.12 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    78 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA60R120P7XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPA60R120P7XKSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide adequate heat sinking and cooling for the IPA60R120P7XKSA1. This can be achieved by using a heat sink with a thermal resistance of ≤ 0.5 K/W, and ensuring good thermal contact between the device and the heat sink. Additionally, the device should be operated within the recommended temperature range to prevent overheating.
  • The recommended gate resistor value for the IPA60R120P7XKSA1 is typically in the range of 10 Ω to 20 Ω. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the IPA60R120P7XKSA1 can be used in parallel to increase current handling. However, it's essential to ensure that the devices are properly matched and synchronized to prevent uneven current sharing and potential damage. It's recommended to consult the datasheet and application notes for more information on parallel operation.
  • The recommended dead time for the IPA60R120P7XKSA1 is typically in the range of 1 μs to 3 μs, depending on the specific application and switching frequency. However, the optimal dead time may vary depending on the specific requirements of the application. It's recommended to consult the datasheet and application notes for more information.

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IPA60R120P7XKSA1 Overview

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