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IPA60R210CFD7XKSA1 - Infineon

Description: MOSFET 600V Cool MOS CFD7 Power Transistor

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IPA60R210CFD7XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPA60R120P7XKSA1-+-
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3D Models
IPA60R210CFD7XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - IPA60R120P7XKSA1-+-
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IPA60R210CFD7XKSA1 Details

  • Manufacturer Part Number:

    IPA60R210CFD7XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220FP, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    49 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.21 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    42 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA60R210CFD7XKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IPA60R210CFD7XKSA1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the IPA60R210CFD7XKSA1. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material (TIM) to fill any gaps. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is around 300W.
  • The recommended gate drive voltage for the IPA60R210CFD7XKSA1 is between 10V and 15V. However, the device can tolerate up to 20V gate drive voltage, but this may reduce the device's reliability and lifespan.
  • Yes, the IPA60R210CFD7XKSA1 can be used in a parallel configuration to increase the overall current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
  • The recommended dead time for the IPA60R210CFD7XKSA1 is around 100ns to 200ns. This ensures that the device is fully turned off before the complementary device is turned on, preventing shoot-through currents and reducing EMI.

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IPA60R210CFD7XKSA1 Overview

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