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IPA60R600P7XKSA1 - Infineon

Description: MOSFET LOW POWER_NEW

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IPA60R600P7XKSA1 - Infineon - PCB symbol
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PCB Footprints
IPA60R600P7XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 220 fullpack
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IPA60R600P7XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO 220 fullpack
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IPA60R600P7XKSA1 Details

  • Manufacturer Part Number:

    IPA60R600P7XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220FP, 3 PIN

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    17 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA60R600P7XKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IPA60R600P7XKSA1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the IPA60R600P7XKSA1. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material (TIM) to fill any gaps. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 300W.
  • The recommended gate drive voltage for the IPA60R600P7XKSA1 is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and oscillations.
  • Yes, the IPA60R600P7XKSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum allowed dv/dt for the IPA60R600P7XKSA1 is 10kV/μs. Exceeding this value can lead to voltage overshoots, ringing, and potentially damage the device.

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IPA60R600P7XKSA1 Overview

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