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IPA60R650CEXKSA1 - Infineon

Description: MOSFET N-Ch 600V 7A TO220FP-3

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PCB Footprints
IPA60R650CEXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 156
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3D Models
IPA60R650CEXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - 156
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IPA60R650CEXKSA1 Details

  • Manufacturer Part Number:

    IPA60R650CEXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220FP, 3 PIN

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    133 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain-source On Resistance-Max:

    0.65 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    19 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA60R650CEXKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPA60R650CEXKSA1 is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1.5 K/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via structure to dissipate heat efficiently.
  • The maximum current rating of the IPA60R650CEXKSA1 is 60A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
  • To protect the IPA60R650CEXKSA1 from overvoltage and overcurrent, a suitable voltage clamp and current limiting circuit should be implemented. Additionally, a fuse or a current sense resistor can be used to detect overcurrent conditions.
  • The recommended gate drive voltage for the IPA60R650CEXKSA1 is between 10V and 15V, as specified in the datasheet. A higher gate drive voltage can reduce the device's on-state resistance, but may also increase the risk of gate oxide damage.

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