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IPA70R900P7SXKSA1 - Infineon

Description: 700VCoolMOSªP7PowerTransistor

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PCB Footprints
IPA70R900P7SXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - OutlinePG-TO220
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3D Models
IPA70R900P7SXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - OutlinePG-TO220
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IPA70R900P7SXKSA1 Details

  • Manufacturer Part Number:

    IPA70R900P7SXKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220FP, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    700 V

  • Drain-source On Resistance-Max:

    0.9 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    12.8 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA70R900P7SXKSA1 Frequently Asked Questions (FAQs)

  • The IPA70R900P7SXKSA1 can operate from -40°C to 150°C, making it suitable for high-temperature applications.
  • Proper cooling can be achieved through a combination of heat sinks, thermal interfaces, and airflow. The device's thermal resistance (Rth) is 1.5 K/W, and a heat sink with a thermal resistance of 1.5 K/W or lower is recommended.
  • A 2-layer or 4-layer PCB with a solid ground plane and a separate power plane is recommended. The device's pins should be connected to the power plane through vias, and the power plane should be connected to the heat sink.
  • The device has built-in overvoltage protection (OVP) and overcurrent protection (OCP). Additionally, external protection circuits can be used, such as a voltage regulator and a current limiter, to ensure the device operates within its specified limits.
  • A gate drive circuit with a voltage source, a gate resistor, and a bootstrap diode is recommended. The gate drive voltage should be between 10V and 15V, and the gate resistor should be between 10Ω and 20Ω.

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IPA70R900P7SXKSA1 Overview

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